STD9N80K5 datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Order code VDS RDS(on)max. ID STD9N80K5 800 V 900 mΩ 7A
* Industry’s lowest RDS(on) x area
* Industry’s best figure of merit (FoM)
* Ultra-low gat.

Application

* Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 te.

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring supe.

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