STD9N65M2 Datasheet, STMicroelectronics

Order codes STD9N65M2 STF9N65M2 STP9N65M2 STU9N65M2 VDS RDS(on) max ID 650 V 0.9 Ω 5A
* Extremely low gate charge
* Excellent output capacitance (Coss) pro.

* Switching applications Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 techno.

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to the strip layout associated to an improved vertical structure, the devices exhibit both low on-resistance and optimized switching characteristics. They are.