STD7NM64N datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

TAB 3 1 DPAK Order code STD7NM64N VDS 640 V RDS(on) max. 1.05 Ω ID 5A
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input r.

Application

* Switching applications Figure 1. Internal schematic diagram '7$% * Description This device is an N-chann.

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and g.

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