STD7LN80K5 datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order code VDS RDS(on) max. ID STD7LN80K5 800 V 1.15 Ω 5A
* Industry’s lowest RDS(on) x area
* Industry’s best FoM (figure of merit)
* Ultra-low gate.

Application

* Switching applications AM01476v1_tab Description This very high voltage N-channel Power MOSFET is designed using.

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring super.

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