STD6N80K5 datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order code VDS STD6N80K5 800 V
* Industry’s lowest RDS(on) x area
* Industry’s best FoM (figure of merit)
* Ultra-low gate charge
* 100% avalanch.

Application

* Switching applications AM01476v1_tab Description This very high voltage N-channel Power MOSFET is designed usin.

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring super.

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