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STD6N10
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE STD6N10
s s s s s s s s
V DSS 100 V
R DS( on) < 0.45 Ω
ID 6A
s
s
TYPICAL RDS(on) = 0.35 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”)
3 1
IPAK TO-251 (Suffix ”-1”)
2
1
DPAK TO-252
3
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM APPLICATIONS DataSheet4U.
STD6N10 Datasheet
