STD60NF06 Datasheet | STMicroelectronics

DESCRIPTION This Power Mosfet series realized with STMicroelectronics unique STrip FET process has specifically been designed to minimize input capacitance and INTERNAL SCHEMATIC DIAGRAM gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Tele and puter application. It is also intended for any application with low gate charge drive requirements. . APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL s AUTOMOTIVE Data Sh ee ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Operating Junction Temperature Value 60 60 ± 20 60 42 240 110 0.73 4 - 55 to 175 (1) I SD≤ 60A, di/dt≤200 A/µs, VDD≤ 24V, Tj≤Tj MAX Unit V V V A A A W W/°C V/ns °C (q) Pulse width limited by safe operating area October 2002 1/9 . Data Sheet 4 U . .. THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.36 100 275 °C/W °C/W °C Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 30 V) Max Value 30 350 Unit A m J ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 20V Min. 60 1 10 ±100 Typ. Max. Unit V µA µA n A ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage...