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STMicroelectronics Electronic Components Datasheet

STD5NE10L Datasheet

N - CHANNEL STripFET POWER MOSFET

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®
TYPE
STD5NE10L
STD5NE10L
N - CHANNEL 100V - 0.3 - 5A - DPAK/IPAK
STripFETPOWER MOSFET
V DSS
100 V
RDS(on)
< 0.4
ID
5A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.3
s EXCEPTIONAL dv/dt CAPABILITY
s AVALANCHE RUGGED TECHNOLOGY
s 100 % AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s FOR TAPE & REEL AND OTHER
PACKAGING OPTIONS CONTACT SALES
OFFICES
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ” Single Feature
Size” strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalanche charac-
teristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility.
IPAK
TO-251
(Suffix ”-1”)
3
2
1
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC MOTOR CONTROL (DISK DRIVES,etc.)
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
VDS
VDGR
VG S
ID
ID
IDM()
Ptot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction T emperature
() Pulse width limited by safe operating area
October 1998
Value
Unit
100 V
100 V
± 20
V
5A
3.5 A
20 A
25 W
0.2 W/oC
6
-65 to 150
150
( 1) ISD 5 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
V/ns
oC
oC
1/5


STMicroelectronics Electronic Components Datasheet

STD5NE10L Datasheet

N - CHANNEL STripFET POWER MOSFET

No Preview Available !

STD5NE10L
THERMAL DATA
Rthj-case
R th j -a mb
Rthc-sink
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature F or Soldering
Purpose
Max
Max
Typ
5
100
1.5
275
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 30 V)
Max Value
5
20
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
Pa ram et e r
Test Conditions
Dr ain- s ou rc e
Breakdown Voltage
ID = 250 µ A VGS = 0
Zero G ate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 100 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
100
Typ. Max.
1
10
± 100
Unit
V
µA
µA
nA
ON ()
Symbo l
VGS(th)
RDS(on)
Pa ram et e r
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10 V ID = 2.5 A
Resistance
VGS = 5 V ID = 2.5 A
Min.
1
T yp.
1.7
Max.
2.5
Unit
V
0.3
0.35
0.4
0.45
ID(o n)
On Stat e Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
5A
DYNAMIC
Symbo l
gfs ()
Ciss
Coss
Crss
Pa ram et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Cap a ci t an c e
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID =2.5 A
Min.
2
T yp.
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
345 450
45 60
20 25
pF
pF
pF
2/5


Part Number STD5NE10L
Description N - CHANNEL STripFET POWER MOSFET
Maker ST Microelectronics
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STD5NE10L Datasheet PDF






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