900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




STMicroelectronics Electronic Components Datasheet

STD5NE10 Datasheet

N - CHANNEL POWER MOSFET

No Preview Available !

www.DataSheet4U.com
® STD5NE10
N - CHANNEL 100V - 0.32 - 5A TO-251/TO-252
STripFETPOWER MOSFET
TYPE
VDSS
RDS(o n)
ID
STD5NE10
100 V
< 0.4
5A
s TYPICAL RDS(on) = 0.32
s EXCEPTIONAL dv/dt CAPABILITY
s AVALANCHE TESTED
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s MOTOR CONTROL (DISK DRIVES, etc.)
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
3
2
1
3
1
IPAK
TO-251
(Suffix ”-1”)
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
VDS Drain-source Volt age (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 k)
VG S
ID
ID
IDM()
Ptot
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1 ) Peak Diode Recovery voltage slope
Tstg Storage T emperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
May 1999
Va l u e
100
100
± 20
5
3.5
20
25
0.17
0.6
-65 to 175
175
( 1) ISD 5A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
Unit
V
V
V
A
A
A
W
W /o C
V/ns
oC
oC
1/9


STMicroelectronics Electronic Components Datasheet

STD5NE10 Datasheet

N - CHANNEL POWER MOSFET

No Preview Available !

STD5NE10
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max 6 oC/W
Rthj-amb Thermal Resistance Junction-ambient
Max 100 oC/W
Rthc-sink Thermal Resistance Case-sink
T yp 1.5 oC/W
T l Maximum Lead Temperature F or Soldering Purpose
275 oC
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
P a ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 30V)
Max Value
5
25
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rat ing
Drain Current (VGS = 0) VDS = Max Rat ing
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
100
Typ. Max.
1
10
± 100
Unit
V
µA
µA
nA
ON ()
Symbo l
VGS(th)
RDS(on)
ID(o n)
P ar am et e r
Test Conditions
Gat e Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 2. 5 A
Resistance
On State Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
2
Typ.
3
0.32
Max.
4
0.4
Unit
V
5A
DYNAMIC
Symbo l
gfs ()
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID = 2. 5 A
Min.
Typ.
2.5
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
305 pF
45 pF
21 pF
2/9


Part Number STD5NE10
Description N - CHANNEL POWER MOSFET
Maker ST Microelectronics
Total Page 3 Pages
PDF Download

STD5NE10 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 STD5NE10 N - CHANNEL POWER MOSFET
ST Microelectronics
2 STD5NE10L N - CHANNEL STripFET POWER MOSFET
ST Microelectronics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy