TAB Order code VDS RDS(on) max. ID STD4NK80Z-1 800 V 3.5 Ω 3A 3 2 1
* 100% avalanche tested
* Gate charge minimized IPAK
* Very low intrinsic c.

* Switching applications G(1) Description This high-voltage device is a Zener-protected N-channel Power MOSFET dev.

This high-voltage device is a Zener-protected N-channel Power MOSFET developed S(3) using the SuperMESH technology by STMicroelectronics, an optimization of the well- AM01476v1_tab established PowerMESH. In addition to a significant reduction in .

STD4NK80Z

STD4NK100Z

STD4NK50Z-1

STD4NK50ZD

STD4NK50ZD-1

STD4NK50ZT4

STD4NK60Z

STD4NK60Z-1

STD4NK60ZT4

STD4N20

STD4N25

STD4N52K3

STD4N62K3

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts