STD4NK80Z-1 mosfet equivalent, n-channel power mosfet.
TAB
Order code
VDS
RDS(on) max.
ID
STD4NK80Z-1
800 V
3.5 Ω
3A
3
2 1
* 100% avalanche tested
* Gate charge minimized
IPAK
* Very low intrinsic c.
* Switching applications
G(1)
Description
This high-voltage device is a Zener-protected N-channel Power MOSFET dev.
This high-voltage device is a Zener-protected N-channel Power MOSFET developed
S(3)
using the SuperMESH technology by STMicroelectronics, an optimization of the well-
AM01476v1_tab established PowerMESH. In addition to a significant reduction in .
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