STD4N62K3 datasheet, mosfet equivalent, ST Microelectronics

Features and benefits

Type STD4N62K3 STU4N62K3
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* VDSS 620 V RDS(on) max < 1.95 Ω ID 3.8 A Pw 70 W 3 1 2 1 3 100% avalanche tested Extremely high dv/dt ca.

Application

Description These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements appl.

Description

These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low o.

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