STD46N6F7
Features
Order code STD46N6F7
VDS 60 V
RDS(on) max. 0.014 Ω
ID 15 A
Figure 1: Internal schematic diagram
D(2, TAB)
G(1) S(3)
- Among the lowest RDS(on) on the market
- Excellent figure of merit (Fo M)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
Applications
- Switching applications
Description
This N-channel Power MOSFET utilizes STrip FET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Order code STD46N6F7
AM01475v1_Tab
Table 1: Device summary
Marking
Package
46N6F7
DPAK
Packaging Tape and reel
January 2016
Doc ID028323 Rev 2
This is information on a product in full production.
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Contents
Contents
1 Electrical ratings 3
2 Electrical characteristics...
