STD3NM60N mosfet equivalent, n-channel power mosfet.
Order codes STD3NM60N
VDSS @TJmax
650 V
RDS(on) max.
< 1.8 Ω
ID 3.3 A
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input re.
* Switching applications
Description
This device is an N-channel Power MOSFET developed using the second generation.
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and g.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 882.95KB)