STD30N10F7 Datasheet, STMicroelectronics

Order code STD30N10F7 VDS 100 V RDS(on) max. 0.024 Ω ID 32 A PTOT 50 W
* Among the lowest RDS(on) on the market
* Excellent FoM (figure of merit)
* Low .

* Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced t.

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order .