STD2HNK60Z mosfet equivalent, n-channel mosfet.
Order codes
VDS
RDS(on) max.
ID
STD2HNK60Z
600 V
4.8 Ω
2A
STD2HNK60Z-1
* 100% avalanche tested
* Gate charge minimized
* Very low intrinsic capacita.
* Switching applications
Description
These high-voltage devices are Zener-protected N-channel Power MOSFETs develop.
These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in onresistance, these de.
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