STD2HNK60Z datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Order codes VDS RDS(on) max. ID STD2HNK60Z 600 V 4.8 Ω 2A STD2HNK60Z-1
* 100% avalanche tested
* Gate charge minimized
* Very low intrinsic capacita.

Application

* Switching applications Description These high-voltage devices are Zener-protected N-channel Power MOSFETs develop.

Description

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in onresistance, these de.

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