TYPE VDSS RDS(on) ID STD22NM20N 200 V < 0.105 Ω 22 A s WORLDWIDE LOWEST GATE CHARGE s TYPICAL RDS(on) = 0.088 Ω s HIGH dv/dt and AVALANCHE CAPABILITIES s LOW INPU.

Used in combination with secondary-side low-voltage STripFET™ products, it contributes to reducting losses and boosting.

This 200V MOSFET with a new advanced layout brings all unique advantages of MDmesh technology to lower voltages. The device exhibits worldwide lowest gate charge for any given onresistance. Its use is therefore ideal as primary switch in isolated DC-.

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