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STD1NK60-1 - N-CHANNEL MOSFET

Description

This high voltage device is an N-channel Power MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™.

Features

  • TAB Order code VDS RDS(on) max. ID PTOT STD1NK60-1 600 V 8.5 Ω 1 A 30 W IPAK 3 2 1 Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3).
  • Extremely high dv/dt capability.
  • ESD improved capability.
  • 100% avalanche tested.
  • Gate charge minimized.

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Full PDF Text Transcription

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STD1NK60-1 N-channel 600 V, 7.3 Ω typ., 1 A SuperMESH™ Power MOSFET in an IPAK package Datasheet - production data Features TAB Order code VDS RDS(on) max. ID PTOT STD1NK60-1 600 V 8.5 Ω 1 A 30 W IPAK 3 2 1 Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3)  Extremely high dv/dt capability  ESD improved capability  100% avalanche tested  Gate charge minimized Applications  Low power battery chargers  Swith mode low power supplies (SMPS)  Low power, ballast, CFL (compact fluorescent lamps) Description This high voltage device is an N-channel Power MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™.
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