Order code STD180N4F6 VDS 40 V RDS(on) max. 2.8 mΩ ID 80 A PTOT 130 W
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* .

* Switching applications
* Power tools Description This device is an N-channel Power MOSFET developed using the .

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STD180N4F6 Table 1: Device summary Marking Pac.

STD1802

STD1802T4-A

STD1805

STD1805T4

STD1807

STD18

STD181

STD181GKxx

STD1855PL

STD1855PLS

STD1862

STD1862L

STD18GKxx

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