Datasheet4U Logo Datasheet4U.com

STD12NF06L-1 - N-CHANNEL POWER MOSFET

General Description

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge.

Key Features

  •    ,3$. Figure 1. Internal schematic diagram ' 7$% .
  •  6  $0Y Order code STD12NF06L-1 VDS 60 V RDS(on) max. 0.09 Ω ID 12 A.
  • Exceptional dv/dt capability.
  • Low gate charge.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STD12NF06L N-CHANNEL POWER MOSFET ST Microelectronics
STD12NF06 N-CHANNEL POWER MOSFET ST Microelectronics
STD12N05 N-CHANNEL POWER MOSFET ST Microelectronics
STD12N05L N-CHANNEL POWER MOSFET ST Microelectronics
STD12N06 N-CHANNEL POWER MOSFET ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STD12NF06LAG Automotive-grade N-channel Power MOSFET
STD12NF06LT4 N-CHANNEL POWER MOSFET
STD12NF06T4 N-channel Power MOSFET
STD12N50DM2 N-CHANNEL POWER MOSFET
STD12N50M2 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STD12NF06L-1 N-channel 60 V, 0.07 Ω typ.,12 A, STripFET™ II Power MOSFET in an IPAK package Datasheet - production data Features    ,3$. Figure 1. Internal schematic diagram ' 7$% *  6  $0Y Order code STD12NF06L-1 VDS 60 V RDS(on) max. 0.09 Ω ID 12 A • Exceptional dv/dt capability • Low gate charge Applications • Switching applications Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Order code STD12NF06L-1 Table 1.