STD11NM50N mosfet equivalent, n-channel power mosfet.
TAB
23 1 DPAK
D(2, TAB)
Order code
VDS
RDS(on) max.
STD11NM50N
500 V
470 mΩ
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate.
ID 8.5 A
* Switching applications
G(1)
Description
S(3)
This device is an N-channel Power MOSFET developed using.
S(3)
This device is an N-channel Power MOSFET developed using the second generation
of MDmesh technology. This revolutionary Power MOSFET associates a vertical
AM01475v1_noZen structure to the company’s strip layout to yield one of the world’s lo.
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