STD110NH02L
DESCRIPTION
The STD110NH02L utilizes the latest advanced design rules of ST’s proprietary STrip FET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTES
ABSOLUTE MAXIMUM RATINGS
Symbol Vspike(1) VDS VDGR VGS ID(2) ID(2) IDM(3) Ptot EAS (1) Tstg Tj Parameter Drain-source Voltage Rating Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 24 24 ± 20 80 80 320 125 0.83 900 -55 to 175 Unit V V V V A A A W W/°C m J °C
September 2003
1/11
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal...
