Order code VDS STD10P10F6 -100 V
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low gate drive power loss RDS(on) max.

* Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET F6 techno.

This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits AM11258v1 very low RDS(on) in all packages. Product status link STD10P10F6 Product summary Or.

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