STD10LN80K5 Datasheet | STMicroelectronics

Features Order code RDS(on) max. 800 V 630 mΩ 8A - Industry’s lowest RDS(on) x area - Industry’s best Fo M (figure of merit) - Ultra-low gate charge - 100% avalanche tested - Zener-protected Applications - Switching applications AM01476v1_tab Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STD10LN80K5 Product summary Order code Marking 10LN80K5 Package DPAK Packing Tape and reel DS11531 - Rev 2 - June 2023 For further information contact your local STMicroelectronics sales office. .st. Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100...