STB7ANM60N mosfet equivalent, n-channel power mosfet.
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Order codes VDS @ Tjmax RDS(on) max. ID
STB7ANM60N STD7ANM60N
650 V
0.9 Ω
5A
* Designed for automotive applications and AEC-Q10.
and AEC-Q101 qualified
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resi.
* 6
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-res.
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