STB35N60DM2 mosfet equivalent, n-channel power mosfet.
Order code
VDS
STB35N60DM2 600 V
RDS(on) max.
0.110 Ω
ID PTOT 28 A 210 W
* Fast-recovery body diode
* Extremely low gate charge and input
capacitance
* .
* Switching applications
Description
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recove.
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters.
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