Order code VDS STB34N50DM2AG 500 V RDS(on) max. 0.12 Ω ID PTOT 26 A 190 W
* Designed for automotive applications and AEC-Q101 qualified
* Fast-recovery body.

and AEC-Q101 qualified
* Fast-recovery body diode
* Extremely low gate charge and input capacitance
* Low on.

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters.

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