STB33N60M2 mosfet equivalent, n-channel power mosfet.
TAB
1
D 2 PAK
3
Figure 1. Internal schematic diagram
, TAB
AM15572v1
Order code STB33N60M2
VDS @ TJmax
650 V
RDS(on) max
0.125 Ω
ID 26 A
* Extremely low gat.
* Switching applications
* LCC converters, resonant converters
Description
This device is an N-channel Power MO.
This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest .
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 1.00MB)