STB32N65M5
Overview
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
- Limited only by maximum temperature allowed * * * * *
- 3 1 2 2 1 3 Worldwide best RDS(on)* area Higher VDSS rating High dv/dt capability Excellent switching performance Easy to drive 100% avalanche tested TO-220 TO-247 Figure
- Internal schematic diagram
