STB32N65M5
Features
Order codes STB32N65M5 STF32N65M5 STI32N65M5 STP32N65M5 STW32N65M5 VDSS@ TJmax 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.119 Ω < 0.119 Ω < 0.119 Ω < 0.119 Ω < 0.119 Ω ID
1 3
3 1 2
24 A 24 A(1) 24 A 24 A 24 A
3 12
D²PAK
TO-220FP
I²PAK
1. Limited only by maximum temperature allowed
- -
- -
- -
3 1 2
2 1
Worldwide best RDS(on)- area Higher VDSS rating High dv/dt capability Excellent switching performance Easy to drive 100% avalanche tested
TO-220
TO-247
Figure 1.
Internal schematic diagram
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Applications
- Switching applications
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Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is bined with STMicroelectronics’ well-known Power MESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding...
