STB32N65M5
Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is bined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.
Key Features
- Limited only by maximum temperature allowed
- area Higher VDSS rating High dv/dt capability Excellent switching performance Easy to drive 100% avalanche tested
Applications
- Switching applications
