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STB32N65M5 - N-channel MOSFET

General Description

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

Key Features

  • Order codes STB32N65M5 STF32N65M5 STI32N65M5 STP32N65M5 STW32N65M5 VDSS@ TJmax 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.119 Ω < 0.119 Ω < 0.119 Ω < 0.119 Ω < 0.119 Ω ID 1 3 3 1 2 24 A 24 A(1) 24 A 24 A 24 A 3 12 D²PAK TO-220FP I²PAK 1. Limited only by maximum temperature allowed.
  • 3 1 2 2 1 3 Worldwide best RDS(on).
  • area Higher VDSS rating High dv/dt capability Excellent switching performance Easy to drive 100% avalanche tested TO-220 TO-247.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB32N65M5, STF32N65M5, STI32N65M5 STP32N65M5, STW32N65M5 N-channel 650 V, 0.095 Ω , 24 A, MDmesh™ V Power MOSFET in D²PAK, I²PAK, TO-220FP, TO-220, TO-247 Features Order codes STB32N65M5 STF32N65M5 STI32N65M5 STP32N65M5 STW32N65M5 VDSS@ TJmax 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.119 Ω < 0.119 Ω < 0.119 Ω < 0.119 Ω < 0.119 Ω ID 1 3 3 1 2 24 A 24 A(1) 24 A 24 A 24 A 3 12 D²PAK TO-220FP I²PAK 1. Limited only by maximum temperature allowed ■ ■ ■ ■ ■ ■ 3 1 2 2 1 3 Worldwide best RDS(on)* area Higher VDSS rating High dv/dt capability Excellent switching performance Easy to drive 100% avalanche tested TO-220 TO-247 Figure 1.