STB21NK50Z datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Type STB21NK50Z
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* VDSS 500 V RDS(on) max < 0.27 Ω ID 17 A Pw 190 W Extremely high dv/dt capability 100% avalanche tested Gate charge mini.

Application

* Switching applications
– Automotive Figure 1. Internal schematic diagram Description The Super.

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the mo.

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