Order code VDS RDS(on) max. STB18N60DM2 600 V 0.295 Ω
* Fast-recovery body diode
* Extremely low gate charge and input capacitance
* Low on-resistance .

* Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecover.

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters a.

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