www.DataSheet4U.com Type VDSS (@Tjmax) 550 V 550 V 550 V 550 V 550 V RDS(on) max 0.26 Ω 0.26 Ω 0.26 Ω 0.26 Ω 0.26 Ω ID 1 3 3 12 STB16NM50N STI16NM50N STF16NM50N ST.

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Po.

This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. .

STB16N65M5

STB16N90K5

STB16NB25

STB16NF06L

STB16NK60Z-S

STB16NK65Z-S

STB16NS25

STB160N75F3

STB160NF02L

STB160NF03L

STB160NF3LL

STB16PF06L

STB100N10F7

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