STB12NM50T4 datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order codes VDS STB12NM50T4 STP12NM50 500 V STP12NM50FP
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resistance RD.

Application

* Switching applications ID 12 A G(1) S(3) NG1D2TS3 Description These N-channel Power MOSFETs are developed usin.

Description

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. These devices offer extremely low onresistance, high dv.

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