STB120N4F6 mosfet equivalent, n-channel power mosfet.
Order codes STB120N4F6 STD120N4F6
VDS 40 V 40 V
RDS(on) max. 4 mΩ 4 mΩ
ID 80 A 80 A
* Designed for automotive applications and AEC-Q101 qualified
* Very low .
and AEC-Q101 qualified
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low.
These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.
6
$0Y
Order codes STB120N4.
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