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STB11NB40 Datasheet ST Microelectronics

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ST Microelectronics · STB11NB40 File Size : 247.87KB · 2 hits

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ID ID IDM (
• ) P t ot dv/dt( 1 ) T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor Peak.

STB11NB40 STB11NB40 STB11NB40
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CHANNEL
ENHANCEMENT
MODE
PowerMESH
MOSFET
STB11NB40
STB11NB40-1
STB11N65M5
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