STB10N60M2 mosfet equivalent, n-channel power mosfet.
Order codes VDS @ TJ max. RDS(on) max.
STB10N60M2
STD10N60M2
650 V
0.60 Ω
STP10N60M2
* Extremely low gate charge
* Excellent output capacitance (Coss) prof.
* Switching applications
Description
These devices are N-channel Power MOSFETs developed using the MDmesh M2 technol.
These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable.
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