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STAC4932F - N-Channel MOSFET

Description

The STAC4932F is a N-channel MOS field-effect RF power transistor.

It is intended for 100 V pulse applications up to 250 MHz.

This device is suitable for use in industrial, scientific and medical applications.

Features

  • Order code STAC4932F Frequency 123 MHz VDD 100 V POUT 1000 W Gain 26 dB.
  • Excellent thermal stability.
  • Common source push-pull configuration.
  • POUT = 1000 W min. (1200 W typ. ) with 26 dB gain at 123 MHz.
  • Pulse conditions: 1ms, 10%.
  • In compliance with the 2002/95/EC European directive.
  • ST air-cavity STAC packaging technology Efficiency 60 %.

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Full PDF Text Transcription

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STAC4932F Datasheet RF power transistors HF/VHF/UHF N-channel MOSFET 1 1 3 3 2 STAC780-4F Pin connection Pin Connection 1 Drain 2 Source (bottom side) 3 Gate Features Order code STAC4932F Frequency 123 MHz VDD 100 V POUT 1000 W Gain 26 dB • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. (1200 W typ.) with 26 dB gain at 123 MHz • Pulse conditions: 1ms, 10% • In compliance with the 2002/95/EC European directive • ST air-cavity STAC packaging technology Efficiency 60 % Description The STAC4932F is a N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications.
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