ST93CS47 Datasheet | STMicroelectronics

.. ST93CS46 ST93CS47 1K (64 x 16) SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE - 3V to 5.5V for the ST93CS46 - 2.5V to 5.5V for the ST93CS47 USER DEFINED WRITE PROTECTED AREA PAGE WRITE MODE (4 WORDS) SEQUENTIAL READ OPERATION 5ms TYPICAL PROGRAMMING TIME ST93CS46 and ST93CS47 are replaced by the M93S46 8 1 PSDIP8 (B) 0.4mm Frame 8 1 SO8 (M) 150mil Width Figure 1. Logic Diagram DESCRIPTION The ST93CS46 and ST93CS47 are 1K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology. The memory is accessed through a serial input D and output Q. The 1K bit memory is organized as 64 x 16 bit words.The memory is accessed by a set of instructions which include Read, Write, Page Write, Write All and instructions used to set the memory protection. A Read instruction loads the address of the first word to be read into an internal address pointer. Table 1. Signal Names S D Q C PRE W VCC VSS Chip Select Input Serial Data Input Serial Data Output Serial Clock Protect Enable Write Enable Supply Voltage Ground D C S PRE W ST93CS46 ST93CS47 Q AI00884B June 1997 This is information on a product still in production bu t not remended for new de signs. 1/16 .. ST93CS46, ST93CS47 Figure 2A. DIP Pin Connections Figure 2B. SO Pin Connections ST93CS46 ST93CS47 S C D Q 1 2 3 4 8 7 6 5 AI00885B ST93CS46 ST93CS47 VCC PRE W VSS S C D Q 1 2 3 4 8 7 6 5 AI00886C VCC PRE W VSS Table 2. Absolute Maximum Ratings (1) Symbol TA TSTG TLEAD VIO VCC VESD Parameter Ambient Operating Temperature Storage Temperature Lead Temperature, Soldering (SO8 package) (PSDIP8 package) 40 sec 10 sec Value - 40 to...