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ST13007 - High voltage fast-switching NPN power transistor

General Description

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability.

It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

Figure 1.

Key Features

  • DC current gain classification.
  • High voltage capability.
  • Low spread of dynamic parameters.
  • Very high switching speed.

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Other Datasheets by STMicroelectronics

Part Number Description
ST13007A High voltage fast-switching NPN power transistor
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ST13007D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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ST13007NFP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ST13007 High voltage fast-switching NPN power transistor Features ■ DC current gain classification ■ High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking (1) Package Packaging ST13007 ST13007A ST13007B TO-220 Tube 1.