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STMicroelectronics Electronic Components Datasheet

ST13003D-K Datasheet

High voltage fast-switching NPN power transistor

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ST13003D-K
High voltage fast-switching NPN power transistor
Features
High voltage capability
Low spread of dynamic parameters
Minimum lot-to-lot spread for reliable operation
)Very high switching speed
t(sIntegrated antiparallel collector-emitter diode
ducApplications
roElectronic ballast for fluorescent lighting
lete PDescription
oThe device is manufactured using high voltage
bsmulti-epitaxial planar technology for high
switching speeds and medium voltage capability.
- OIt uses a cellular emitter structure with planar
)edge termination to enhance switching speeds
Obsolete Product(swhile maintaining the wide RBSOA.
1
2
3
SOT-32
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
ST13003D-K
13003D
Package
SOT-32
Packaging
Bag
September 2009
Doc ID 14182 Rev 2
1/8
www.st.com
8


STMicroelectronics Electronic Components Datasheet

ST13003D-K Datasheet

High voltage fast-switching NPN power transistor

No Preview Available !

Electrical ratings
1 Electrical ratings
ST13003D-K
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCES Collector-emitter voltage (VBE = 0)
700 V
VCEO Collector-emitter voltage (IB = 0)
400 V
VEBO Emitter-base voltage (IC = 0, IB = 0.75 A, tP < 10 µs)
V(BR)EBO
V
IC Collector current
1.5 A
ICM
t(s)IB
cIBM
duPTOT
roTSTG
Obsolete Product(s) - Obsolete PTJ
Collector peak current (tP < 5 ms)
Base current
Base peak current (tP < 5 ms)
Total dissipation at Tc = 25 °C
Storage temperature
Max. operating junction temperature
3
0.75
1.5
40
-55 to 150
150
A
A
A
W
°C
°C
2/8 Doc ID 14182 Rev 2


Part Number ST13003D-K
Description High voltage fast-switching NPN power transistor
Maker STMicroelectronics
Total Page 8 Pages
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