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SGT65R65AL - e-mode PowerGaN transistor

Description

The SGT65R65AL is a 650 V, 25 A e-mode PowerGaN transistor combined with a well established packaging technology.

Features

  • 1 2 34 PowerFLAT 5x6 HV for PowerGaN D(5,6,7,8) Order code VDS RDS(on) max. ID SGT65R65AL 650 V 65 mΩ 25 A.
  • Enhancement mode normally off transistor.
  • Very high switching speed.
  • High power management capability.
  • Extremely low capacitances.
  • Kelvin source pad for optimum gate driving.
  • Zero reverse recovery charge Series G-HEMT G(4).

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Full PDF Text Transcription

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SGT65R65AL Datasheet 650 V, 49 mΩ typ., 25 A, e-mode PowerGaN transistor Features 1 2 34 PowerFLAT 5x6 HV for PowerGaN D(5,6,7,8) Order code VDS RDS(on) max. ID SGT65R65AL 650 V 65 mΩ 25 A • Enhancement mode normally off transistor • Very high switching speed • High power management capability • Extremely low capacitances • Kelvin source pad for optimum gate driving • Zero reverse recovery charge Series G-HEMT G(4) Applications • AC-DC converters • AC-DC PSU for server and telecom KS(3) S(1,2) G4D5678S12KS3 • LED illumination • Uninterruptable power supplies (UPS) Description The SGT65R65AL is a 650 V, 25 A e-mode PowerGaN transistor combined with a well established packaging technology.
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