Datasheet Summary
Silicon carbide Power MOSFET 1200 V, 52 mΩ typ., 65 A in an HiP247 package
Features
HiP247
3 2 1
D(2, TAB)
- Very low RDS(on) over the entire temperature range
- Very high operating junction temperature capability (TJ = 200 °C)
- Very fast and robust intrinsic body diode
- Low capacitance
Applications
- AC-DC converters
- DC-DC converters
- Motor drives
- Solar inverters (string and central)
- Uninterruptable power supplies (UPS)
G(1) S(3)
Description
AM01475v1_noZen
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good...