SCT50N120
Description
AM01475v1_noZen This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.
Key Features
- Very low RDS(on) over the entire temperature range
- Very high operating junction temperature capability (TJ = 200 °C)
- Very fast and robust intrinsic body diode
- Low capacitance
Applications
- AC-DC converters
