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SCT50N120 - 1200V 65A Silicon carbide Power MOSFET

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STMicroelectronics

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SCT50N120 1200V 65A Silicon carbide Power MOSFET by STMicroelectronics - Datasheet Preview — Datasheet preview – SCT50N120

Datasheet Details

Part number	SCT50N120
Manufacturer	STMicroelectronics
File Size	201.28 KB
Description	1200V 65A Silicon carbide Power MOSFET
Datasheet	SCT50N120 Datasheet
Additional preview pages of the SCT50N120 datasheet.

SCT50N120 Product details

Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.

This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.

Features

HiP247 3 2 1 D(2, TAB).
Very low RDS(on) over the entire temperature range.
Very high operating junction temperature capability (TJ = 200 °C).
Very fast and robust intrinsic body diode.
Low capacitance.

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Published: Mar 24, 2020 |