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Q1NK80ZR - N-CHANNEL MOSFET

General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Key Features

  • TYPE VDSS RDS(on) ID Pw STQ1NK80ZR-AP STN1NK80Z STD1NK80Z STD1NK80Z-1 800 V 800 V 800 V 800 V < 16 Ω < 16 Ω < 16 Ω < 16 Ω 0.3 A 0.25A 1.0 A 1.0 A 3W 2.5 W 45 W 45 W.

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Other Datasheets by STMicroelectronics

Part Number Description
Q1NC45 N-CHANNEL MOSFET
Q1NC45R-AP N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STQ1NK80ZR-AP - STN1NK80Z STD1NK80Z - STD1NK80Z-1 N-CHANNEL 800V - 13 Ω - 1 A TO-92 /SOT-223/DPAK/IPAK Zener - Protected SuperMESH™ MOSFET Table 1: General Features TYPE VDSS RDS(on) ID Pw STQ1NK80ZR-AP STN1NK80Z STD1NK80Z STD1NK80Z-1 800 V 800 V 800 V 800 V < 16 Ω < 16 Ω < 16 Ω < 16 Ω 0.3 A 0.25A 1.0 A 1.0 A 3W 2.5 W 45 W 45 W ■ TYPICAL RDS(on) = 13Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ ESD IMPROVED CAPABILITY ■ 100% AVALANCHE TESTED ■ NEW HIGH VOLTAGE BENCHMARK ■ GATE CHARGE MINIMIZED DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.