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STMicroelectronics Electronic Components Datasheet

PKC136 Datasheet

PEAK CLAMP

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®
Application Specific Discretes
ASD™
PKC-136
PEAK CLAMP
MAIN PRODUCT CHARACTERISTICS
VBR
VDRM
mP
160Vdc
700Vdc
1.5W
.coFEATURES
s Protection of the Mosfet in flyback power supply
Us TRANSIL™ and blocking diode in a single
package
t4BENEFITS
s Accurate voltage clamping regardless load
es Reduced current loop
es Reduced EMI emission
s High integration
hs Fast assembly
Ss Reduced losses in stand by mode
www.DataBASIC CONNECTION
Lf
T
D
DO-15
Io
Vo
ABSOLUTE MAXIMUM RATINGS (limiting values)
Symbol
Parameter
Tstg Storage temperature
Tj Junction temperature
P Maximum power dissipation T°lead = 90°C
August 2001 - Ed: 2A
.comValue
t4U- 40 to + 150
e150
he1.5
Unit
°C
°C
W
www.DataS 1/5


STMicroelectronics Electronic Components Datasheet

PKC136 Datasheet

PEAK CLAMP

No Preview Available !

PKC-136
ELECTRICAL CHARACTERISTICS TRANSIL
Symbol
Parameter
Test conditions
Value
Unit
Min. Typ. Max.
IRM
VBR
Rd
αT
VsCL
Leakage current
VR = 136V
Tj = 25°C
Tj =125°C
1 µA
10
Breakdown voltage
IR = 1mA
pulse test < 50ms
Tj = 25°C 150 160 170 V
Dynamical Resistance
Temperature
Coefficient
tp < 500ns
between I = 0.5Amps
and I = 1.5Amps
Tj = 125°C
4
10.8 10-4/°C
Surge Clamping
voltage
Ipp = 2.7Amps
10/1000µs
219 V
CALCULATION OF THE CLAMPING VOLTAGE:
In repetitive mode and for low current rating, use the equation (1) and (2) to calculate the breakdown
voltage VBR of the transil versus the operating junction temperature and use the equation (3) to calculate
the clamping voltage versus the transil current Ipp and the temperature.
VBR = αT (Tj 25)VBR ( 25°C ) (1)
VBR (Tj ) = VBR ( 25°C ) + ∆VBR
(2)
VCL(Tj ) = VBR (Tj ) + Rd .Ipp
(3)
ELECTRICAL CHARACTERISTICS DIODE (Tj = 25°C unless otherwise specified)
Symbol
IR
VRRM
trr
VFP
Parameter
Reverse leakage current
Repetitive Peak Reverse
Voltage
Reverse Recovery Time
Peak Forward Voltage
Tests conditions
VR = VRRM
Tj = 25°C
Tj = 25°C
Tj = 125°C
IF = 1A dIF / dt = -50A/µs
VR = 30V
IF = 3A
Tj = 25°C
dIF / dt = 100A/µs Tj = 125°C
Min.
700
Value
Typ.
3
Max.
3
20
45
12
18
Unit
µA
V
ns
V
CAPACITANCE
Symbol
Parameter
C Total Parasitic capacitance 1MHz 30mV
Typical Value
35
Unit
pF
2/5


Part Number PKC136
Description PEAK CLAMP
Maker ST Microelectronics
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