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PD84006-E Datasheet

Manufacturer: STMicroelectronics
PD84006-E datasheet preview

PD84006-E Details

Part number PD84006-E
Datasheet PD84006-E_STMicroelectronics.pdf
File Size 241.83 KB
Manufacturer STMicroelectronics
Description RF Power Transistor
PD84006-E page 2 PD84006-E page 3

PD84006-E Overview

The PD84006-E is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband mercial and industrial applications. It operates at 7 V in mon source mode at frequencies of up to 1 GHz boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF ’s superior...

PD84006-E Key Features

  • Excellent thermal stability mon source configuration Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz Plasti

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