logo

PD84006-E Datasheet, ST Microelectronics

PD84006-E transistor equivalent, rf power transistor.

PD84006-E Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 241.83KB)

PD84006-E Datasheet
PD84006-E
Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 241.83KB)

PD84006-E Datasheet

Features and benefits


*
*
*
*
*
* Excellent thermal stability Common source configuration Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz Plastic package .

Application

It operates at 7 V in common source mode at frequencies of up to 1 GHz boasts the excellent gain, linearity and reliabi.

Description

The PD84006-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 .

Image gallery

PD84006-E Page 1 PD84006-E Page 2 PD84006-E Page 3

TAGS

PD84006-E
Power
Transistor
ST Microelectronics

Manufacturer


STMicroelectronics (https://www.st.com/)

Related datasheet

PD84006L-E

PD84002

PD84008-E

PD84008L-E

PD800A

PD800A-230-28

PD800A-230-48

PD8042

PD81101

PD839C4

PD85004

PD85015-E

PD85025C

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts