logo

PD55035STR1-E Datasheet, STMicroelectronics

PD55035STR1-E transistor equivalent, rf power ldmos transistor.

PD55035STR1-E Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 326.27KB)

PD55035STR1-E Datasheet

Features and benefits

Order code Frequency VDD PD55035STR1-E 500 MHz 12.5 V
* Excellent thermal stability
* Common source configuration
* POUT = 35 W with 16.9 dB at 500 MHz.

Application

It operates at 12 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearit.

Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 G.

Image gallery

PD55035STR1-E Page 1 PD55035STR1-E Page 2 PD55035STR1-E Page 3

TAGS

PD55035STR1-E
power
LDMOS
transistor
STMicroelectronics

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts