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PD20015S-E Datasheet, ST Microelectronics

PD20015S-E transistors equivalent, transistors.

PD20015S-E Avg. rating / M : 1.0 rating-11

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PD20015S-E Datasheet

Features and benefits


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* Excellent thermal stability Common source configuration POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V Plastic package ESD protection I.

Application

It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excellent gain, lineari.

Description

The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to.

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TAGS

PD20015S-E
Transistors
ST Microelectronics

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