PD20010-E Datasheet | STMicroelectronics

Features - - - - - - Excellent thermal stability mon source configuration POUT = 10 W with 11 d B gain @ 2 GHz / 13.6 V Plastic package ESD protection In pliance with the 2002/95/EC european directive Power SO-10RF (formed lead) Description The PD20010-E is a mon source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband mercial and industrial applications. It operates at 13.6 V in mon source mode at frequencies of up to 1 GHz. PD20010-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, Power SO-10RF. PD20010-E’s superior linearity performance makes it an ideal solution for car mobile radio. The Power SO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting remendations are available in .st./rf/ (look for application note AN1294). Power SO-10RF (straight lead) Figure 1. Pin connection Source Gate Drain Table 1. Device summary Order codes PD20010-E PD20010S-E PD20010TR-E PD20010STR-E Packages Power SO-10RF (formed lead) Power SO-10RF (straight lead) Power SO-10RF (formed lead) Power SO-10RF (straight lead) Rev 1 Packing Tube Tube Tape and reel Tape and reel 1/12 .st. 12 March 2009 Contents Contents .. Electrical data - - - - - - - - - . 3 1.1 1.2 Maximum ratings - - - - - - - - . . . . 3 Thermal data - - - - - - - - - . . 3 Electrical characteristics...