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STMicroelectronics Electronic Components Datasheet

P9NK70ZFP Datasheet

STP9NK70ZFP

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STP9NK70Z - STP9NK70ZFP
STB9NK70Z - STB9NK70Z-1 - STW9NK70Z
N-CHANNEL 700V - 1- 7.5A TO-220/FP/D2PAK/I2PAK/TO-247
Zener-Protected SuperMESH™Power MOSFET
TYPE
VDSS RDS(on)
ID
Pw
STP9NK70Z
STP9NK70ZFP
STB9NK70Z
STB9NK70Z-1
STW9NK70Z
700 V
700 V
700 V
700 V
700 V
< 1.2
< 1.2
< 1.2
< 1.2
< 1.2
7.5 A
7.5 A
7.5 A
7.5 A
7.5 A
115 W
35 W
115 W
115 W
156 W
s TYPICAL RDS(on) = 1.0
s EXTREMELY HIGH dv/dt CAPABILITY
s IMPROVED ESD CAPABILITY
s 100% AVALANCHE RATED
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
s VERY GOOD MANUFACTURING
REPEATIBILITY
TO-220
3
2
1
TO-247
3
2
1
TO-220FP
123
I2PAK
3
1
D2PAK
www.DataSheet4U.com
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
ORDERING INFORMATION
SALES TYPE
MARKING
STP9NK70Z
P9NK70Z
STP9NK70ZFP
P9NK70ZFP
STB9NK70Z
B9NK70Z
STB9NK70ZT4
STB9NK70Z-1
STW9NK60Z
April 2002
B9NK70Z
B9NK70Z-1
W9NK70Z
PACKAGE
TO-220
TO-220FP
D2PAK
D2PAK
I2PAK
TO-247
PACKAGING
TUBE
TUBE
TUBE
(ONLY UNDER REQUEST)
TAPE & REEL
TUBE
TUBE
1/14


STMicroelectronics Electronic Components Datasheet

P9NK70ZFP Datasheet

STP9NK70ZFP

No Preview Available !

www.DataSheet4U.com
STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z
www.DataSheet4U.com
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tj Operating Junction Temperature
Tstg Storage Temperature
(l) Pulse width limited by safe operating area
(1) ISD 7.5A, di/dt 200 µA, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed
TO-220 /
D2PAK / I2PAK
Value
TO-220FP
700
700
± 30
7.5 7.5 (*)
4.7 4.7 (*)
30 30 (*)
115 35
0.92 0.28
4000
4.5
- 2500
-55 to 150
-55 to 150
TO-247
7.5
4.7
30
156
1.25
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
°C
THERMAL DATA
TO-220
I2PAK
D2PAK
TO-220FP
TO-247
Rthj-case Thermal Resistance Junction-case Max
1.09
3.6 0.8 °C/W
Rthj-pcb Thermal Resistance Junction-pcb Max
(When mounted on minimum Footprint)
30 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max
62.5 30 °C/W
Tl Maximum Lead Temperature For Soldering Purpose
300
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
7.5
230
Unit
A
mJ
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
2/14


Part Number P9NK70ZFP
Description STP9NK70ZFP
Maker ST Microelectronics
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P9NK70ZFP Datasheet PDF






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