P9NK65ZFP Datasheet | STMicroelectronics

DESCRIPTION The Super MESH™ series is obtained through an extreme optimization of ST’s well established stripbased Power MESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series plements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s ORDERING INFORMATION SALES TYPE STP9NK65Z STP9NK65ZFP MARKING P9NK65Z P9NK65ZFP PACKAGE TO-220 TO-220FP PACKAGING TUBE TUBE July 2003 1/7 Free Datasheet http://.n Datasheet. STP9NK65 - STP9NK65ZFP ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Parameter STP9NK65Z Value STP9NK65ZFP Unit V V V 7 (- ) 4.4 (- ) 28 (- ) 30 0.24 A A A W W/°C KV V/ns 2500 V °C °C Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100p F, R=1.5KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 7 4.4 28 110 0.88 650 650 ± 30 3500 TBD -55 to 150 -55 to 150 ( ) Pulse width limited by safe operating area (1) ISD ≤TBD, di/dt ≤ TBD, VDD ≤ V(BR)DSS, T j ≤ TJMAX. (- ) Limited only by maximum temperature allowed THERMAL DATA TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.14 62.5 300 TO-220FP 4.2 °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 7 TBD Unit A m J GATE-SOURCE...