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STMicroelectronics Electronic Components Datasheet

P9NK65ZFP Datasheet

STP9NK65ZFP

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STP9NK65Z
STP9NK65ZFP
N-CHANNEL 650V - 1- 7A TO-220/TO-220FP
Zener-Protected SuperMESH™Power MOSFET
TARGET DATA
TYPE
VDSS RDS(on)
ID
Pw
STP9NK65Z
STP9NK65ZFP
650 V < 1.2 7 A 110 W
650 V < 1.2 7 A 30 W
s TYPICAL RDS(on) = 1.0
s EXTREMELY HIGH dv/dt CAPABILITY
s IMPROVED ESD CAPABILITY
s 100% AVALANCHE RATED
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
s VERY GOOD MANUFACTURING
REPEATIBILITY
3
2
1
TO-220
3
2
1
TO-220FP
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
ORDERING INFORMATION
SALES TYPE
MARKING
STP9NK65Z
P9NK65Z
STP9NK65ZFP
P9NK65ZFP
July 2003
PACKAGE
TO-220
TO-220FP
PACKAGING
TUBE
TUBE
1/7
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STMicroelectronics Electronic Components Datasheet

P9NK65ZFP Datasheet

STP9NK65ZFP

No Preview Available !

STP9NK65 - STP9NK65ZFP
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tj Operating Junction Temperature
Tstg Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD TBD, di/dt TBD, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Value
STP9NK65Z
STP9NK65ZFP
650
650
± 30
7 7 (*)
4.4 4.4 (*)
28 28 (*)
110 30
0.88 0.24
3500
TBD
- 2500
-55 to 150
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
KV
V/ns
V
°C
°C
TO-220
1.14
62.5
300
TO-220FP
4.2
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
7
TBD
Unit
A
mJ
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
2/7
Free Datasheet http://www.nDatasheet.com


Part Number P9NK65ZFP
Description STP9NK65ZFP
Maker STMicroelectronics
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