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STMicroelectronics Electronic Components Datasheet

P9NK60ZFP Datasheet

STP9NK60ZFP

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STP9NK60Z - STP9NK60ZFP
STB9NK60Z - STB9NK60Z-1
N-CHANNEL 600V - 0.85- 7A TO-220/FP/D2PAK/I2PAK
Zener-Protected SuperMESH™Power MOSFET
TYPE
VDSS RDS(on)
ID
Pw
STP9NK60Z
STP9NK60ZFP
STB9NK60Z
STB9NK60Z-1
600 V < 0.95 7 A 125 W
600 V < 0.95 7 A 30 W
600 V < 0.95 7 A 125 W
600 V < 0.95 7 A 125 W
s TYPICAL RDS(on) = 0.85
s EXTREMELY HIGH dv/dt CAPABILITY
s IMPROVED ESD CAPABILITY
s 100% AVALANCHE RATED
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
s VERY GOOD MANUFACTURING
REPEATIBILITY
TO-220
123
I2PAK
3
2
1
TO-220FP
3
1
D2PAK
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
ORDERING INFORMATION
SALES TYPE
MARKING
STP9NK60Z
P9NK60Z
STP9NK60ZFP
P9NK60ZFP
STB9NK60Z
B9NK60Z
STB9NK60ZT4
B9NK60Z
STB9NK60Z-1
B9NK60Z-1
June 2002
PACKAGE
TO-220
TO-220FP
D2PAK
D2PAK
I2PAK
PACKAGING
TUBE
TUBE
TUBE
TAPE & REEL
TUBE
1/13


STMicroelectronics Electronic Components Datasheet

P9NK60ZFP Datasheet

STP9NK60ZFP

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STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tj Operating Junction Temperature
Tstg Storage Temperature
(l) Pulse width limited by safe operating area
(1) ISD 7A, di/dt 200 µA, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
Rthj-case
Rthj-pcb
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-pcb Max
(When mounted on minimum Footprint)
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Value
TO-220 /
D2PAK / I2PAK
600
TO-220FP
600
± 30
7 7 (*)
4.4 4.4 (*)
28 28 (*)
125 30
1 0.24
4000
4.5
- 2500
-55 to 150
-55 to 150
TO-220
I2PAK
1
D2PAK
30
62.5
300
TO-
220FP
4.16
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
7
235
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
°C
°C/W
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
2/13


Part Number P9NK60ZFP
Description STP9NK60ZFP
Maker STMicroelectronics
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